QBBO-4425 BBO Pockels cell
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E-O crystal |
BBO |
Clear Aperture |
>Φ3.8 mm |
λ ／4 Voltage |
≤3.4 KV |
Extinction ratio |
>2000:1 |
Insertion loss |
<2% |
Wavefron distorton |
<λ/10 |
Capacitance |
～2pF |
Damage threshold |
850M W/cm2 for pulses <10ns;
5G W/cm2 for pulses <1ns |
Typical Rise time |
<300ps |
Working wavelength |
1064nm |
Dimension |
Φ30x35mm |
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Application:
QBBO-4425 BBO Pockels cell Q-switch should be used with λ/4 polarization plate and loaded with λ/4 voltage。BBO axis arrangement in devices is shown in the following figure，BBO Z-axis（optical-axis）and Y-axis parallel the device central line and electrode central line, respectively. So the laser light and its polarization are adjusted accordingly. |
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Note
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The maximum voltage loaded on the device should be less than 5KV；
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The device should be used in appropriately clean, dust-free environment.；
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The device should be used against strong impinging.
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The device should not be disassembled because of its all-sealed structure.
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